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Indexed by:会议论文

Date of Publication:2010-06-26

Included Journals:EI、CPCI-S、Scopus

Volume:675-677

Page Number:113-+

Key Words:heating treatment; resistivity; polycrystalline silicon

Abstract:Effect of heat treatment in atmosphere on the resistivity of polycrystalline silicon has been investigated in this paper. After heat treatment at 1050 degrees C for 10h, there is no obvious change of the resistivity in the N-type region of polycrystalline silicon, which could be contributed to the complicated influence factors, such as more impurities content and defects. On the other hand, an obvious increase of the resistivity was observed in the P-type region which could be contributed the redistribution of Al and B in the Si-SiO2 interface. The resistivity of the P-type region increased from less than 1 Omega.cm to several hundreds Omega.cm.