Release Time:2019-03-09 Hits:
First Author: Yi Tan
Disigner of the Invention: 胡跟兄,张磊,许富民
Application Number: CN201110152163.8
Authorization Date: 2011-06-08
Authorization Number: CN102219221A
Prev One:去除多晶硅中杂质磷和金属杂质的方法及装置
Next One:一种熔炼坩埚用涂层的制备方法