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Indexed by:会议论文

Date of Publication:2008-01-01

Included Journals:EI、CPCI-S、SCIE

Volume:373-374

Page Number:497-+

Key Words:ion implantation; scratch; residual stress; micro-Raman Spectroscopy

Abstract:Surface modification mechanism on scratch of ion implanted p-Si (100) is investigated by scanning electric microscopy and micro-Raman spectroscopy. Raman experimental results reveal that the amorphous Si appears near the scratch during the scratching process, while the ion implantation adjusts the structural parameters of the amorphous Si and changes the residual stress state of the surface scratch from tension to compression. Moreover, Raman experimental results reveal that the laser power synchronously decreases Raman shift and full width of half maximum intensity (FWHM). The laser heating effect can be neglected because a lower laser power is selected in our measurements.