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Indexed by:期刊论文

Date of Publication:2012-12-01

Journal:PLASMA SCIENCE & TECHNOLOGY

Included Journals:Scopus、SCIE、EI

Volume:14

Issue:12

Page Number:1106-1109

ISSN No.:1009-0630

Key Words:plasma; numerical simulation; hydrogen dilution

Abstract:The characteristics of homogeneous discharges in mixed gases of hydrogen diluted silane and argon at atmospheric pressure are investigated numerically based on a one-dimensional fluid model. This model takes into account the primary processes excitation and ionization, sixteen reactions of radicals with radicals in silane/hydrogen/argon discharges and therefore, can adequately represent the discharge plasma. We analyze the effects of very high frequency (VHF) on the densities of species (e, H, SiH3, SiH3+ and SiH2) in such discharges using the model. The simulation results show that the densities of SiH3, SiH3+, H, and SiH2 increase with VHF when the VHF ranges from 30 MHz to 150 MHz. It is found that the deposition rate of mu c-Si:H film depends on the concentration of SiH3, SiH3+, SiH2, and H in the plasma. The effects of VHF on the deposition rate and the amount of crystallized fraction for,u,c-Si:H film growth is also discussed in this paper.