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Effect of Y-doping on switching mechanisms and impedance spectroscopy of HfO(x)-based RRAM devices.

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Date of Publication:2024-09-12

Journal:Nanotechnology

Volume:34

Issue:23

ISSN No.:0957-4484

Key Words:activation energy; HfO x -based RRAM; impedance spectroscopy; resistive switching; Y-doping

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