张贵锋

个人信息Personal Information

教授

博士生导师

硕士生导师

性别:男

毕业院校:西北工业大学

学位:博士

所在单位:材料科学与工程学院

电子邮箱:gfzhang@dlut.edu.cn

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Removal of impurities from metallurgical grade silicon by electron beam melting

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论文类型:期刊论文

发表时间:2011-03-01

发表刊物:Journal of Semiconductors

收录刊物:EI、ISTIC、Scopus

卷号:32

期号:3

ISSN号:16744926

摘要:Solar cells are currently fabricated from a variety of silicon-based materials. Now the major silicon material for solar cells is the scrap of electronic grade silicon (EG-Si). But in the current market it is difficult to secure a steady supply of this material. Therefore, alternative production processes are needed to increase the feedstock. In this paper, EBM is used to purify silicon. MG-Si particles after leaching with an initial purity of 99.88% in mass as starting materials were used. The final purity of the silicon disk obtained after EBM was above 99.995% in mass. This result demonstrates that EBM can effectively remove impurities from silicon. This paper mainly studies the impurity distribution in the silicon disk after EBM. ? 2011 Chinese Institute of Electronics.