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Indexed by:期刊论文

Date of Publication:2010-03-04

Journal:VACUUM

Included Journals:SCIE、EI

Volume:84

Issue:7

Page Number:930-934

ISSN No.:0042-207X

Key Words:Diamond film; Boron doping; HFCVD; SEM; XPS

Abstract:Highly boron-doped diamond films were deposited on silicon substrate by hot filament chemical vapor deposition in a gas mixture of hydrogen and methane. The chemical bonding states, surface texture, and electrical resistivity of these films were analyzed by X-ray photoelectron spectroscopy, scan, electron microscope, and four-point probe method. It was found that boron dopants play an important role in the texture and chemical bonding states of the diamond films. An appropriate concentration of boron dopants (B/C ratio of 10 000 ppm) can simultaneously improve crystal quality and reduce resistivity of the diamond films. The minimum resistivity of diamond films reaches 1.12 x 10(-2) Omega cm, which is applicable as electrodes. (C) 2010 Elsevier Ltd. All rights reserved.