点击次数：

论文类型：期刊论文

发表时间：2013-01-01

发表刊物：NEW JOURNAL OF CHEMISTRY

收录刊物：SCIE、Scopus

卷号：37

期号：10

页面范围：3274-3280

ISSN号：1144-0546

摘要：Prakash and co-workers recently reported a direct trifluoromethylation of Si, B, S, and C centers using fluoroform (CF3H) and dramatic effects of alkali metal salts of hexamethyldisilazane in this reaction (Science, 2012, 338, 1324). Herein, the detailed mechanisms of trifluoromethylation of Si and C centers in the presence of (Me3Si)(2)NK as a base have been studied using the DFT method. It has been found that the origin of the dramatic effect of the alkali metals is the stability of an intermediate MCF3. More interestingly, a linear relationship has been found between the chemical hardness of M+ (M = Li, Na, K, Rb, Cs) and the difference between the values of Delta Gd-ec and Delta G(tfm) (Delta G(dec), decomposition energy of the key intermediate MCF3; Delta G(tfm), relative energy barrier for the formation of a Si-CF3 or C-CF3 bond). These results may help to both theoretically and experimentally search for better bases to develop more atom-economic and environmentally benign protocols to achieve trifluoromethylation using CF3H.