Indexed by:Journal Article

First Author:Zheng, Xiantong

Correspondence Author:Liang, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China.; Wang, XQ (reprint author), Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China.

Co-author:Wang, Yixin,Chen, Ling,Chen, Zhaoying,Wang, Tao,Sheng, Bowen,Liang, Hongwei,Wang, Ping,Sun, Xiaoxiao,Li, Mo,Zhang, Jian,Wang, Xinqiang,Wang, Ding,Rong, Xin

Date of Publication:2018-01-01

Journal:SUPERLATTICES AND MICROSTRUCTURES

Included Journals:EI、SCIE

Document Type:J

Volume:113

Page Number:650-656

ISSN:0749-6036

Key Words:In droplet; InGaN; MBE

Summary:Effect of indium (In) droplets on InGaN thin films grown by molecular beam epitaxy (MBE) has been investigated. The surface of InGaN covered by In droplets shows a smoother topography than that without droplets, indicating that the presence of In droplets is beneficial to the two dimensional growth. Beneath the In droplets, many ring-like structures are observed. The arrangement of these "ring" shows the movement of the In droplets during the InGaN growth. A qualitative growth model is proposed to explain the evolution of the InGaN surface morphology in In-droplet-induced-epitaxy process, giving an explanation that a local vapor-liquid-solid (VLS) system is preferentially formed at the edge of the droplets, leading to a high growth rate. Furthermore, the energy dispersive Xray spectroscopy results reveal that the relatively higher In/Ga flux ratio in the region covered by the In droplet results in a locally higher In content. (C) 2017 Elsevier Ltd. All rights reserved.