Title of Paper:Catalytic growth and characterization of single crystalline Zn doped p-type beta-Ga2O3 nanowires

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Date of Publication:2016-12-05

Journal:JOURNAL OF ALLOYS AND COMPOUNDS

Included Journals:SCIE、EI

Volume:687

Page Number:964-968

ISSN No.:0925-8388

Key Words:Zn doped beta-Ga2O3; Nanowires; Chemical vapor deposition; p-n homojunction

Abstract:Single crystalline beta-Ga2O3 nanowires with different Zn doping contents were grown via catalytic chemical vapor deposition method. The field-emission scanning electron microscopy showed that when the Zn content was 1.3%, the Zn doped beta-Ga2O3 nanowires with uniform size and high density were synthesized. The diameter and length of nanowires were about 50 nm and dozens of micron, respectively. The X-ray diffraction measurements indicated that the position of (202) diffraction peak of samples shifted toward lower diffracting angle with increasing Zn content, which was explained by the substitution of Ga3+ by Zn2+ during Zn doping process. Furthermore, the Zn-doped beta-Ga2O3 nanowires/n-type beta-Ga2O3 thin film p-n homojunction was fabricated. The current-voltage (I-V) characteristic of the homojunction device showed a good rectifying behavior. This result is suggested that the Zn doped beta-Ga2O3 nanowires showed p-type conductivity. (C) 2016 Elsevier B.V. All rights reserved.