Title of Paper:Vertically conducting deep-ultraviolet light-emitting diodes with interband tunneling junction grown on 6H-SiC substrate

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Date of Publication:2016-03-01

Journal:JAPANESE JOURNAL OF APPLIED PHYSICS

Included Journals:SCIE、EI、Scopus

Volume:55

Issue:3

ISSN No.:0021-4922

Abstract:Vertically conducting deep-ultraviolet (DUV) light-emitting diodes (LEDs) with a polarization-induced backward-tunneling junction (PIBTJ) were grown by metal-organic chemical vapor deposition (MOCVD) on 6H-SiC substrates. A self-consistent solution of Poisson-Schrodinger equations combined with polarization-induced theory was applied to simulate the PIBTJ structure, energy band diagrams, and free-carrier concentration distribution. AlN and graded AlxGa1-xN interlayers were introduced between the PIBTJ and multiple quantum well layers to avoid cracking of the n-Al0.5Ga0.5N top layer. At a driving current of 20 mA, an intense DUV emission at similar to 288nm and a weak shoulder at similar to 386nm were observed from the AlGaN top layer side. This demonstrates that the PIBTJ can be used to fabricate vertically conducting DUV LED on SiC substrates. (C) 2016 The Japan Society of Applied Physics