Indexed by:Journal Article

Date of Publication:2014-08-01

Journal:CHEMICAL RESEARCH IN CHINESE UNIVERSITIES

Included Journals:ISTIC、SCIE

Volume:30

Issue:4

Page Number:556-559

ISSN:1005-9040

Key Words:Patterned sapphire substrate; GaN; Selective growth; Crystallographic plane

Abstract:Cone-shaped patterned sapphire substrate was prepared by inductively coupled plasma etching and GaN nucleation layer was grown on it by metal-organic chemical vapor deposition. A selective growth of GaN nucleation layer was found on the slope of the cone-shaped patterned sapphire substrat, and the distribution morphology of GaN had significantly changed after it was recrystallized. GaN selective growth and redistribution were analyzed by investigating the distribution of crystallographic planes on the cone surface and the atom array of specific planes at atom level.