Professor
Supervisor of Doctorate Candidates
Supervisor of Master's Candidates
Academic Titles: 集成电路学院院长
Paper Publications
Room temperature electroluminescence from arsenic doped p-type ZnO nanowires/n-ZnO thin film homojunction light-emitting diode
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Indexed by:Journal Article
Date of Publication:2014-04-01
Journal:JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Included Journals:EI、SCIE
Volume:25
Issue:4
Page Number:1955-1958
ISSN:0957-4522
Abstract:The highly arrayed arsenic doped p-ZnO nanowires/n-ZnO thin film homojunction light-emitting diode was fabricated on semi-insulated Si substrate. The homojunction was consisted of high-quality n-ZnO thin film grown by metal-organic chemical vapor deposition technology following arsenic doped ZnO nanowires grown by chemical vapor deposition. The device shows good rectification characteristic with a turn-on voltage of similar to 4.8 V and reverse breakdown voltage of similar to 18 V. Moreover, two distinct electroluminescence bands centered at 2.35 and 3.18 eV are detected from this device under forward bias at room temperature.