Title of Paper:Defects and acceptor centers in ZnO introduced by C+-implantation

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Date of Publication:2014-03-01

Journal:JOURNAL OF MATERIALS SCIENCE

Included Journals:SCIE、EI、Scopus

Volume:49

Issue:5

Page Number:1994-1999

ISSN No.:0022-2461

Abstract:ZnO single crystals were implanted with 280 keV C+ to a dose of 6 x 10(16) cm(-2). Positron annihilation measurements reveal a large number of vacancy clusters in the implanted sample. They further agglomerate into larger size or even microvoids after annealing up to 700 A degrees C, and are fully removed at 1200 A degrees C. X-ray diffraction, photoluminescence, and Raman scattering measurements all indicate severe damage introduced by implantation, and the damaged lattice is partially recovered after annealing above 500 A degrees C. From room temperature photoluminescence measurements, an additional peak at around 3.235 eV appears in the implanted sample after annealing at 1100 A degrees C, which is much stronger than that of the free exciton. From the analysis of low temperature photoluminescence spectra, this peak is mostly a free electron to acceptor (e,A(0)) line which is probably associated with C (O) .