Indexed by:Journal Article

Date of Publication:2014-01-01

Journal:JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Included Journals:EI、SCIE

Volume:25

Issue:1

Page Number:267-272

ISSN:0957-4522

Abstract:GaN epilayer was grown on a new polyhedral patterned sapphire substrate (new PSS) by metal-organic chemical vapor deposition. The new PSS was prepared by combining the dry etching technique and wet etching technique. The X-ray diffraction indicated that the full width at half maximum values of (0002) and () diffraction peaks in the GaN epilayer grown on the new PSS were evidently smaller than that in the GaN epilayer grown on the normal treated PSS. The improvement of GaN quality was attributed to the reduction of threading dislocations (TDs) in GaN epilayer, and the mechanism of the reduction of TDs was analyzed. The influence of the new PSS on the optical properties as well as the residual stress in GaN epilayer was also discussed.