Indexed by:Journal Article

Date of Publication:2013-04-22

Journal:APPLIED PHYSICS LETTERS

Included Journals:Scopus、EI、SCIE

Volume:102

Issue:16

ISSN:0003-6951

Abstract:Vertical conducting light-emitting diodes based on p-ZnO/n-GaN structure were fabricated on conductive n-SiC(6H) substrates. The p-ZnO:As films were prepared by arsenic out-diffusion from a sandwiched GaAs interlayer on a GaN/SiC template, and the As-Zn-2V(Zn) complex was considered to be the most probable defect contributing to the p-type conductivity of the ZnO:As films. Under forward bias, an intense ultraviolet emission at similar to 384 nm from the ZnO side was observed. The electroluminescence performance of the diode was remarkable in terms of its low emission onset and high-purity ultraviolet emission. Additionally, the unencapsulated diode showed good stability over a duration of 2 months. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4802806]