Title of Paper:n-ZnO/p-GaN heterojunction light-emitting diodes with a polarization-induced graded-p-AlxGa1-xN electron-blocking layer

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Date of Publication:2013-02-13

Journal:JOURNAL OF PHYSICS D-APPLIED PHYSICS

Included Journals:SCIE、EI、Scopus

Volume:46

Issue:6

ISSN No.:0022-3727

Abstract:n-ZnO/p-GaN heterojunction light-emitting diodes (LEDs) with a polarization-induced graded-p-AlxGa1-xN electron-blocking layer (PIEBL) were fabricated. Compared with n-ZnO/p-GaN and n-ZnO/p-Al0.4Ga0.6N/p-GaN LEDs, the PIEBL can effectively block electron injection from ZnO to GaN and promote hole injection from GaN to ZnO. A dominant ZnO-related ultraviolet emission was observed from the edge emission of this device. The mechanism of PIEBL was also discussed in terms of polarization and energy band theory. This study suggests that PIEBL is an excellent electron-blocking layer for ZnO-based LEDs and laser diodes.