Professor
Supervisor of Doctorate Candidates
Supervisor of Master's Candidates
Academic Titles: 集成电路学院院长
Paper Publications
Introducing Ga2O3 thin films as novel electron blocking layer to ZnO/p-GaN heterojunction LED
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Indexed by:Journal Article
Date of Publication:2012-12-01
Journal:APPLIED PHYSICS B-LASERS AND OPTICS
Included Journals:EI、SCIE、Scopus
Volume:109
Issue:4
Page Number:605-609
ISSN:0946-2171
Abstract:N-ZnO/Ga2O3/p-GaN heterojunction light-emitting diode (LED) was fabricated by metal-organic chemical vapor deposition. Compared with the n-ZnO/p-GaN structure, the deep level visible emission at 525 nm was completely suppressed while UV emission at similar to 392 nm was significantly improved in ZnO/Ga2O3/p-GaN structure. The role of Ga2O3 in n-ZnO/Ga2O3/p-GaN heterojunction LED was discussed in detail.