Title of Paper:Improvement of the Quality of a GaN Epilayer by Employing a SiNx Interlayer

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Date of Publication:2012-08-01

Journal:CHINESE PHYSICS LETTERS

Included Journals:SCIE、ISTIC、Scopus

Volume:29

Issue:8

ISSN No.:0256-307X

Abstract:GaN epilayers with a porous SiNx interlayer were grown by metal-organic chemical vapor deposition on c-plane sapphire substrates. It is found that the crystalline qualities are significantly improved with SiNx growth. The improvement is attributed to the reduction of the density of threading dislocations (TDs) by an over-growth process of GaN grown on a SiNx interlayer. The influence mechanism of SiNx interlayers on GaN growth mode is also discussed.