Title of Paper:High quality p-type ZnO films grown by low pressure plasma-assisted MOCVD with N2O rf plasma doping source

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Date of Publication:2008-08-11

Journal:JOURNAL OF MATERIALS PROCESSING TECHNOLOGY

Included Journals:SCIE、EI、Scopus

Volume:204

Issue:1-3

Page Number:481-485

ISSN No.:0924-0136

Key Words:photoluminescence; metalorganic chemical vapor deposition; zinc oxide films; p-type doping; light-emitting devices

Abstract:N-doped ZnO films have been grown on (0 0 0 1) sapphire substrates by a novel low-pressure plasma-assisted metalorganic chemical vapor deposition system using N2O plasma as doping source. X-ray photoelectron spectroscopy analysis confirmed the incorporation of N into the ZnO films. Room temperature p-type conduction was achieved for the N-doped ZnO film at suitable substrate temperatures, with the resistivity of 8.71 Omega cm, hole concentration up to 3.44 x 10(17) cm(-3) and mobility of 2.09 cm(2)/Vs. In the photoluminescence (PL) measurement, a strong near-band-edge emission was observed for both undoped and N-doped films, while the deep-level emission was almost undetectable, which confirmed that the obtained ZnO-based films were well close to stoichiometry and of optically high quality. (C) 2008 Elsevier B.V All rights reserved.