Indexed by:Journal Article

Date of Publication:2008-01-01

Journal:ELECTROCHEMICAL AND SOLID STATE LETTERS

Included Journals:Scopus、EI、SCIE

Volume:11

Issue:12

Page Number:H323-H326

ISSN:1099-0062

Abstract:Reproducible p-type Sb-doped ZnO thin films were fabricated on c-plane sapphire substrates by the metallorganic chemical vapor deposition (MOCVD) technique using trimethylantimony as the doping precursor. Sb was introduced into ZnO thin films as a p-type dopant without any phase separation. Obvious donor-acceptor pair emissions were observed from photoluminescence spectra of ZnO:Sb films at 10 K. The acceptor binding energy is estimated to be similar to 124 meV. Using the metallorganic source as the dopant of p-type ZnO thin films by the MOCVD technique is beneficial for the industrialized production of ZnO light-emitting diodes. (C) 2008 The Electrochemical Society. [DOI: 10.1149/1.2980342] All rights reserved.