Indexed by:Journal Article

Date of Publication:2007-06-01

Journal:SOLID STATE COMMUNICATIONS

Included Journals:Scopus、EI、SCIE

Volume:142

Issue:11

Page Number:655-658

ISSN:0038-1098

Key Words:ZnO homojunction; light emitting device; As doping; pulsed laser deposition

Abstract:A ZnO homojunction light emitting device was grown on n+ GaAs substrate by pulsed laser deposition. As-doped ZnO film by diffusion of As from the substrate was used for the p-type side and Al-doped ZnO film for the n-type side of the device. A distinct electroluminescence emission consisting of a dominant emission peak at similar to 2.5 eV and a weak shoulder centered at similar to 3.0 eV was observed at room temperature. The I-V characteristic of the ZnO homojunction showed a good rectifying behavior with a turn-on voltage of similar to 4.5 V and a reverse breakdown voltage of similar to 9 V. (c) 2007 Elsevier Ltd. All rights reserved.