Title of Paper:Preparation and study of stoichlometric ZnO by MOCVD technique

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Date of Publication:2005-12-15

Journal:JOURNAL OF CRYSTAL GROWTH

Included Journals:SCIE、EI、Scopus

Volume:285

Issue:4

Page Number:521-526

ISSN No.:0022-0248

Key Words:photoluminescence; X-ray diffraction; X-ray photoelectron; metalorganic molecular beam epitaxy; zinc compounds; semiconducting II-VI materials

Abstract:The effects of growth temperature oil the optical and electronics properties of ZnO thin films, grown oil n-Si(100) substrate by plasma-assisted MOCVD, were investigated by X-ray diffraction (XRD), X-ray photoelectron spectrometer (XPS), photoluminescence (PL), and Hall measurements. The XRD patterns of the samples indicated that the crystallinity of the ZnO films grown in 500 degrees C was improved. The XPS spectra showed that ZnO films changed from O-rich to Zn-rich after increasing temperature from 400 to 500 degrees C. Moreover, Hall measurements indicated that the resistivity in 400 degrees C (> 10(4) Omega cm) Was higher than that in 500 degrees C (3.48 x 10(3) Omega cm). The PL spectrum also showed that the ultraviolet emission peak in 400 'C was stronger than that in 500 degrees C. These results call possibly help improve the understanding of obtaining highly optical films grown oil n-Si(100) substrates. (c) 2005 Elsevier B.V. All rights reserved.