梁红伟   

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Supervisor of Doctorate Candidates
Supervisor of Master's Candidates

Main positions: 集成电路学院院长

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Patents

Title:具有纵向栅极结构的常关型HEMT 器件

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First Author:huanghuolin

Disigner of the Invention:孙仲豪,lianghongwei,xiaxiaochuan,duguotong,Jiming Bian,hulizhong

Authorization Date:2016-02-26

Authorization number:CN205508826U

Address: No.2 Linggong Road, Ganjingzi District, Dalian City, Liaoning Province, P.R.C., 116024
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