梁红伟   

Professor
Supervisor of Doctorate Candidates
Supervisor of Master's Candidates

Main positions: 集成电路学院院长

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Patents

Title:一种带有InGaN插入层的非故意掺杂高阻GaN薄膜及其制备方法

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First Author:lianghongwei

Disigner of the Invention:刘建勋,柳阳,xiaxiaochuan,duguotong,蒋建华,闫晓密

Application Number:CN201510712168.X

Authorization Date:2015-10-28

Authorization number:CN105390532A

Address: No.2 Linggong Road, Ganjingzi District, Dalian City, Liaoning Province, P.R.C., 116024
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