梁红伟   

Professor
Supervisor of Doctorate Candidates
Supervisor of Master's Candidates

Academic Titles: 集成电路学院院长

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Patents

一种带有InGaN插入层的非故意掺杂高阻GaN薄膜及其制备方法

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First Author:梁红伟

Disigner of the Invention:闫晓密,蒋建华,杜国同,夏晓川,柳阳,刘建勋

Application Number:CN201510712168.X

Authorization Date:2015-10-28

Authorization Number:CN105390532A

Address: No.2 Linggong Road, Ganjingzi District, Dalian City, Liaoning Province, P.R.C., 116024
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