
Professor
Supervisor of Doctorate Candidates
Supervisor of Master's Candidates
Academic Titles: 集成电路学院院长
一种带有InGaN插入层的非故意掺杂高阻GaN薄膜及其制备方法
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First Author:梁红伟
Disigner of the Invention:闫晓密,蒋建华,杜国同,夏晓川,柳阳,刘建勋
Application Number:CN201510712168.X
Authorization Date:2015-10-28
Authorization Number:CN105390532A
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