Influence of radical power on the electrical and optical properties of ZnO:N films grown by metal-organic chemical vapor deposition with N2O plasma doping source
Release Time:2019-03-11 Hits:
Indexed by: Journal Article
Date of Publication: 2012-10-30
Journal: 3rd International Conference on Microelectronics and Plasma Technology (ICMAP)
Included Journals: Scopus、CPCI-S、EI、SCIE
Volume: 521
Page Number: 253-256
ISSN: 0040-6090
Key Words: Zinc oxide; Thin film; Metal-organic chemical vapor deposition (MOCVD); Photoluminescence
Abstract: N-doped ZnO (ZnO:N) films are grown by a low-pressure plasma assisted metal-organic chemical vapor deposition system on insulating Si (111) substrate. N2O plasma is used as the N precursor of ZnO:N films, which is activated by a radio frequency generator. The influence of activating power on the properties of ZnO films is studied by means of X-ray diffraction, Hall effect, X-ray photoelectron spectroscopy and low temperature photoluminescence measurements. P-type ZnO:N films with acceptable electrical and optical properties are achieved under the optimal activating power conditions. XPS study reveals a competition between acceptor N-O and donor (N-2)(O) during doping influence the properties of ZnO films. (C) 2011 Elsevier B. V. All rights reserved.