Release Time:2019-03-11  Hits:

Indexed by: Conference Paper

Date of Publication: 2010-08-02

Included Journals: Scopus、CPCI-S、EI

Volume: 654-656

Page Number: 1740-+

Key Words: GaN films; diamond films; nitriding time; SAW devices; ECR-PEMOCVD

Abstract: High quality GaN films are deposited on freestanding thick diamond films by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The characteristics of GaN films were investigated by x-ray diffraction analysis (XRD), reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). The high quality GaN films with small surface roughness of 8.3 nm and high c-orientation are successfully achieved at the optimized nitriding time with the diamond substrate. These properties of GaN films with small surface smoothness and high c-orientation are well used as piezoelectric films for surface acoustic wave (SAW) devices.