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Indexed by:会议论文

Date of Publication:2010-08-02

Included Journals:EI、CPCI-S、Scopus

Volume:654-656

Page Number:1740-+

Key Words:GaN films; diamond films; nitriding time; SAW devices; ECR-PEMOCVD

Abstract:High quality GaN films are deposited on freestanding thick diamond films by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The characteristics of GaN films were investigated by x-ray diffraction analysis (XRD), reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). The high quality GaN films with small surface roughness of 8.3 nm and high c-orientation are successfully achieved at the optimized nitriding time with the diamond substrate. These properties of GaN films with small surface smoothness and high c-orientation are well used as piezoelectric films for surface acoustic wave (SAW) devices.