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The Preparation and Charateristics of InxGa1-xN（0.06 ≤x≤ 0.58） Films

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Indexed by:期刊论文

Date of Publication:2011-01-01

Journal:中国物理快报

Volume:28

Issue:10

Page Number:108104-108104

Pre One:Deposition and properties of highly C-oriented GaN films

Next One:Effects of annealing ambience on ZnO:N films grown by MOCVD and the p-type doping mechanism of ZnO:N films investigated by XANES
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