location： Current position: Home >> Scientific Research >> Paper Publications

Influence of N2 Flux on the Improvement of Highly c-oriented GaN Films on Diamond Substrates

Hits:

Indexed by:期刊论文

Date of Publication:2011-01-01

Journal:Vacuum

Included Journals:ISTIC

Volume:85

Issue:7

Page Number:725-729

Pre One:Photoluminescence study of Sb-doped ZnO films deposited by a closed tube CVT technique

Next One:Deposition and properties of highly C-oriented GaN films
Recommended Ph.D.Supervisor Recommended MA Supervisor Institutional Repository Personal Page

Address: No.2 Linggong Road, Ganjingzi District, Dalian City, Liaoning Province, P.R.C., 116024

Click : times
  • MOBILE Version
    •
    Open time:..
    The Last Update Time:..

    Mobile phone sweep