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A comparative study of intermediate layers for the growth of high crystalline GaN films on amorphous glass substrates with low-temperature ECR-PEMOCVD

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Indexed by:期刊论文

Date of Publication:2014-01-01

Journal:Materials Science in Semiconductor Processing

Volume:26

Issue:c

Page Number:182-186

Pre One:In-Situ AlN Induced Valence State Variation of V in Vanadium Oxide Films Investigated by XPS

Next One:Deposition and characteristics of GaN films on Ni metal substrate by ECR-PEMOCVD
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