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Performance-Improved Normally-off A1GaN/GaN High-Electron Mobility Transistors with a Designed p-GaN Area under the Recessed Gate

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Indexed by:会议论文

Date of Publication:2016-01-01

Included Journals:CPCI-S

Page Number:1230-1232

Abstract:Stable normally-off operation with high threshold voltage (Vth) is strongly desired in power switching applications. A p-GaN area under the barrier-recessed gate is employed to improve the VI, and off-state characteristics of the GaN-based HEMTs. TCAD-based device simulations are carried out to demonstrate and optimize the proposed structures. Finally, improved performances with Vth over 5V and breakdown voltage (BV) over 1500V are achieved in the HEMTs with combined gate p-GaN design and multiple step-shaped field plate structures.

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