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Indexed by:Journal Papers

Date of Publication:2019-09-01

Journal:SCIENCE CHINA-MATERIALS

Included Journals:EI、SCIE

Volume:62

Issue:9

Page Number:1323-1331

ISSN No.:2095-8226

Key Words:Ag filament; perovskite memory; analog switch; threshold switch; resistance mechanism

Abstract:Organic-inorganic hybrid perovskites (OHPs) are well-known as light-absorbing materials in solar cells and have recently attracted considerable attention for the applications in resistive switching memory. Previous studies have shown that ions can migrate to form a conductive channel in perovskites under an external voltage. However, the exact resistance mechanism for Ag or halogens which dominate the resistive behavior is still controversial. Here, we demonstrate a resistive switching memory device based on Ag/FA(0.83)MA(0.17)Pb(I0.82Br0.18)(3)/fluorine doped tin oxide (FTO). The migration of Ag cations and halide anions is demonstrated by energy dispersive X-ray spectroscopy (EDS) after the SET process (positive voltage on Ag). By comparing the I-V behavior of the Au-based devices, it is clear that the conductive channel formed by Ag is the main factor of the switching characteristics for Ag-based devices. Meanwhile, by controlling the appropriate SET voltage, two kinds of resistance characteristics of the analog switch and threshold switch can be realized in the Ag-based device. As a result, it may be possible to implement both data storage and neuromorphic computing in a single device.