Current position: Home >> Scientific Research >> Paper Publications

The Preparation and Charateristics of InxGa1-xN(0.06 ≤x≤ 0.58) Films

Release Time:2022-10-04  Hits:

Date of Publication: 2022-10-03

Journal: 中国物理快报

Institution: 物理学院

Volume: 28

Issue: 10

Page Number: 108104-108104

Prev One:The Preparation and Characteristics of InxGa1-xN (0.06 <= x <= 0.58) Films Deposited by ECR-PEMOCVD

Next One:The Inorganic-organic Hybrid Junction with n-ZnO Nanorods/p-polyfluorene Structure Grown with Low-temperature Aqueous Chemical Growth Method