Release Time:2019-03-09  Hits:

Indexed by: Journal Article

Date of Publication: 2014-01-15

Journal: JOURNAL OF ALLOYS AND COMPOUNDS

Included Journals: EI、SCIE

Volume: 583

Page Number: 39-42

ISSN: 0925-8388

Key Words: Gallium nitride (GaN); Glass substrate; Plasma-enhanced metal organic chemical; vapor deposition system (ECR-PEMOCVD); Low temperature growth

Abstract: A low temperature growth method based on electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition system (ECR-PEMOCVD) was proposed for the growth of GaN films on ordinary soda-lime glass substrates with Ni as intermediate layer. With this method, high c-orientated crystalline GaN films with atomically smooth surface were achieved on amorphous Ni/glass substrate at an extremely low temperature of similar to 480 degrees C. This GaN/Ni/glass structures have great potential for dramatically improve the scalability and cost of solid-state lighting, since the adverse effects with high temperature process for glass substrates can be effectively suppressed by this technique. (C) 2013 Elsevier B. V. All rights reserved.