Release Time:2019-03-09  Hits:

Indexed by: Journal Article

Date of Publication: 2013-10-01

Journal: CHINESE SCIENCE BULLETIN

Included Journals: Scopus、SCIE

Volume: 58

Issue: 30

Page Number: 3617-3623

ISSN: 1001-6538

Key Words: GaN; low-temperature deposited; glass substrates; Ti film; ECR-PEMOCVD

Abstract: Highly c-axis-oriented GaN films were deposited on Ti coated glass substrates using low temperature electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition system (ECR-PEMOCVD) with trimethyl gallium (TMGa) as gallium source. The influence of TMGa flux on the properties of GaN films were systematically investigated by reflection high energy electron diffraction (RHEED), X-ray diffraction analysis (XRD), atomic force microscopy (AFM) and Raman scattering. The GaN film with small surface roughness and high c-axis preferred orientation was successfully achieved at the optimized TMGa flux of 1.0 sccm. The ohmic contact characteristic between GaN and Ti layer was clearly demonstrated by the near-linear current-voltage (I-V) curve. The GaN/Ti/glass structure has great potential to dramatically improve the scalability and reduce the cost of solid-state lighting light emitting diodes.