大连理工大学主页平台管理系统 Jiming Bian--Home-- Rediscovery of the Role of the i-Layer in n-ZnO/SiO2/p-GaN Through Observations from Both the ZnO and GaN Sides

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Rediscovery of the Role of the i-Layer in n-ZnO/SiO2/p-GaN Through Observations from Both the ZnO and GaN Sides

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期刊论文
First Author:
Liu, Yuanda
Correspondence Author:
Liu, YD (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China.
Co-author:
Liang, Hongwei,Xia, Xiaochuan,Bian, Jiming,Shen, Rensheng,Liu, Yang,Luo, Yingmin,Du, Guotong
Date of Publication:
2012-12-01
Journal:
JOURNAL OF ELECTRONIC MATERIALS
Included Journals:
Scopus、SCIE、EI
Document Type:
J
Volume:
41
Issue:
12
Page Number:
3453-3456
ISSN No.:
0361-5235
Key Words:
Oxides; semiconductors; MOCVD; electroluminescence
Abstract:
Ultraviolet (UV)-emitting n-ZnO/SiO2/p-GaN devices were fabricated by metalorganic chemical vapor deposition. Electroluminescence spectra of the devices were measured from both the n-ZnO and p-GaN sides. It was found that a narrow emission peak centered at similar to 391.3 nm was observed from the front side, while three peaks (372 nm, 380 nm, and 390 nm) emerged in the case of testing from the GaN side. To interpret this notable difference, a theoretical mechanism is proposed based on carrier accumulation and injection under forward bias voltage.

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