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Indexed by:期刊论文

Date of Publication:2012-01-01

Journal:ELECTROCHEMICAL AND SOLID STATE LETTERS

Included Journals:SCIE、EI、Scopus

Volume:15

Issue:5

Page Number:H164-H166

ISSN No.:1099-0062

Abstract:A novel ZnO homojunction light emitting diode (LED) with n-ZnO-nanorods/p-ZnO:As-film structure is fabricated on the GaAs substrate. Desirable rectifying behavior and distinct ultraviolet electroluminescence emission are observed from this novel structured ZnO homojunction LED. The well-aligned n-type one-dimensional ZnO nanorods are synthesized by a simple wet chemical bath deposition. To fabricate the ZnO nanorods on the GaAs substrate, a key two-dimensional intermediate ZnO:As film layer is employed. The ZnO:As film is grown by metal organic chemical vapor deposition followed by an annealing treatment. Moreover, the intermediate ZnO:As film is also used as the p-type layer of the ZnO LED. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.020205esl] All rights reserved.