Release Time:2019-03-09  Hits:

Indexed by: Journal Article

Date of Publication: 2012-01-01

Journal: ELECTROCHEMICAL AND SOLID STATE LETTERS

Included Journals: Scopus、EI、SCIE

Volume: 15

Issue: 5

Page Number: H164-H166

ISSN: 1099-0062

Abstract: A novel ZnO homojunction light emitting diode (LED) with n-ZnO-nanorods/p-ZnO:As-film structure is fabricated on the GaAs substrate. Desirable rectifying behavior and distinct ultraviolet electroluminescence emission are observed from this novel structured ZnO homojunction LED. The well-aligned n-type one-dimensional ZnO nanorods are synthesized by a simple wet chemical bath deposition. To fabricate the ZnO nanorods on the GaAs substrate, a key two-dimensional intermediate ZnO:As film layer is employed. The ZnO:As film is grown by metal organic chemical vapor deposition followed by an annealing treatment. Moreover, the intermediate ZnO:As film is also used as the p-type layer of the ZnO LED. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.020205esl] All rights reserved.