Release Time:2019-03-09  Hits:

Indexed by: Journal Article

Date of Publication: 2011-01-21

Journal: VACUUM

Included Journals: EI、SCIE

Volume: 85

Issue: 7

Page Number: 725-729

ISSN: 0042-207X

Key Words: GaN films; Diamond films; SAW devices; ECR-PEMOCVD

Abstract: High-quality GaN films are deposited on freestanding thick diamond films by electron cyclotron resonance plasma-enhanced metal organic chemical vapour deposition (ECR-PEMOCVD). Trimethyl gallium (TMGa) and N-2 are applied as precursors and different N-2 fluxes are used to achieve high-quality GaN films. The influence of N-2 flux on the properties of GaN films is systematically investigated by X-ray diffraction analysis (XRD), reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM) and Hall effect measurement (HL). The results show that the high-quality GaN films with small surface roughness of 4.5 nm and high c-orientation are successfully achieved at the optimized N-2 flux of 90 sccm. The most significant improvements in morphological, structural, and optical properties of GaN films are obtained by using a proper N-2 flux. (c) 2010 Elsevier Ltd. All rights reserved.