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Indexed by:期刊论文

Date of Publication:2010-09-01

Journal:APPLIED SURFACE SCIENCE

Included Journals:SCIE、EI

Volume:256

Issue:22

Page Number:6770-6774

ISSN No.:0169-4332

Key Words:ZnO; MOCVD; High-pressure H-2; Zn(OH)(2)

Abstract:ZnO thin films were treated by high-pressure hydrogen (H-2). Scanning electron microscope (SEM) images show that the surface morphology of ZnO films has been changed significantly by H-2 treatment. X-ray diffraction patterns show that the Zn(OH)(2) phases formed after H-2 treatment. The X-ray photoelectron spectroscopy results indicate that H atoms were doped into the surface of ZnO by forming H-O-Zn bond. The phenomenon shows that it is easy to form O-H bond in ZnO rather than H interstitial atom under high-pressure hydrogen circumstance. (C) 2010 Elsevier B.V. All rights reserved.