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Indexed by:期刊论文

Date of Publication:2010-01-01

Journal:CHINESE PHYSICS LETTERS

Included Journals:SCIE、ISTIC

Volume:27

Issue:1

ISSN No.:0256-307X

Abstract:Sb-doped ZnO thin films are deposited on c-plane sapphire substrates by pulsed laser deposition. Hall results indicate that the conductivity of the Sb-doped ZnO thin films is strongly dependent on the substrate temperature. The sample deposited at the temperature of 550 degrees C exhibits p-type conductivity. It gives a resistivity of 15.25 Omega.cm, with a Hall mobility of 1.79 cm(2)V(-1)s(-1) and a carrier concentration of 2.290 x 10(17) cm(-3) at room temperature. The x-ray diffraction indicates that the Sb-doped ZnO thin films deposited in the range of 450-650 degrees C are high c-axis oriented. Low-temperature photoluminescence spectra indicate that the sample deposited at 550 degrees C shows the strong acceptor-bound exciton (A(0)X) emission.