Current position: Home >> Scientific Research >> Patents

一种石墨衬底上的氧化锌基MOS器件

Hits:

First Author:Jiming Bian

Disigner of the Invention:张志坤,Qin Fuwen,liuweifeng,Luo Yingmin

Application Number:CN201310018911.2

Authorization Date:2013-01-18

Authorization number:CN103107205A

Pre One:具有纵向栅极结构的常关型HEMT 器件

Next One:一种可吸收紫外线高透明的复合薄膜及其制备方法