Hits:
First Author:lianghongwei
Disigner of the Invention:孙景昌,duguotong,赵涧泽,Jiming Bian,hulizhong
Affilication of Author(s):微电子学院
Application Number:CN101236906
Authorization number:CN200810010103.0
Pre One:一种Sb掺杂制备p型ZnO薄膜方法
Next One:一种石墨衬底上的氧化锌基MOS器件