论文名称：THERMODYNAMICS ON BORON REJECTION DURING METALLURGICAL GRADE SILICON OXIDATION BY SILICON DIOXIDE
论文类型：会议论文
收录刊物：EI、CPCI-S、Scopus
页面范围：529-536
关键字：Metallurgical grade silicon refining; Silicon monoxide; Boron rejection; Equilibrium partial pressure; Disproportionation
摘要：A metallurgical grade silicon (MG-Si) refining concept process was presented. Under vacuum conditions, silicon was selectively oxidized by high purity silicon dioxide to form gaseous silicon monoxide while impurities with low vapor pressure in MG-Si were rejected in residue; Then high purity silicon was obtained from the disproportionation of condensed silicon monoxide; and by-produced silicon dioxide was recycled for the oxidation step. Thermodynamics on boron rejection during the oxidation were studied in this work. In the temperature range of 1200-1800K., the saturated vapor pressure of boron, and the Gibbs free energy changes, the equilibrium partial pressures of silicon monoxide and boron oxides of potential reactions were calculated. And the effect of boron activity in MG-Si was also discussed. The results indicated that boron in MG-Si can be rejected during the oxidation and it showed the potential for the further development of the new refining process.
发表时间：2012-03-11