论文名称：Preparation of porous silicon and Effect of Gettering on the Resistivity
论文类型：会议论文
收录刊物：EI、CPCI-S、Scopus
卷号：476-478
页面范围：1794-1797
关键字：porous silicon; electrochemical etching; gettering; resistivity
摘要：The porous silicon layer was fabricated by electrochemical etching process using an aqueous HF-based electrolyte. The characterizations of porous silicon layer were investigated by Emission-type scanning electron microscope (SEM), Raman spectra and X-ray diffraction (XRD). With the current density increasing, the pore diameter and density become much bigger. This result also was confirmed by Raman spectra and XRD result of samples, which revealed the decreasing of grain size of silicon. The resistivity of crystalline silicon increased when the porous layer was removed after heat treatment at 850 degrees C for 2.5h, which should be attributed to the gettering process of porous silicon.
发表时间：2012-03-27