论文类型：会议论文
收录刊物：EI
卷号：911 MSF
页面范围：51-55
摘要：Large temperature gradient was introduced to improve the removal rate of metal impurity in silicon ingot during direction solidification. The concentration of metal impurities in the silicon ingot with a large temperature gradient is 0.96 ppmw. The solidification time is reduced by 20% due to the fast speed of crystal growth improved; meanwhile the purity is increased by 64%. © 2018 Trans Tech Publications, Switzerland.