论文类型：会议论文
收录刊物：Scopus、EI
卷号：2015-January
期号：January
页面范围：201-208
摘要：Molten Si-AI alloy, with the addition of Sn, was used for metallurgical grade Si purification by a low-temperature solidification method with the aim of improving the recovery rate of Si. In this ternary melt, bulk Si was grown with a planar front by a directional solidification process under a well-controlled thermal gradient and growth rate conditions, thereby reducing the contamination of solvent metals. Effects of cooling rate, amount of Sn addition, and temperature gradient on the quality of bulk Si were determined. The criterion for constitutional supercooling for single-phase growth from multicomponent melts was employed to evaluate the growth process. Copyright ? 2015 by The Minerals, Metals & Materials Society. All rights reserved.