论文名称：Characterisation of single crystalline silicon grown by Czochralski method
论文类型：期刊论文
发表刊物：Energy Materials: Materials Science and Engineering for Energy Systems
收录刊物：SCIE、EI、Scopus
卷号：7
期号：4
页面范围：425-428
ISSN号：17489237
关键字：Single crystalline silicon; Electrical property; Crystal defect; Impurity
摘要：The conversion efficiency of solar cells made from single crystalline Si is generally about 3-4% higher than those made from Si multicrystal by the casting method. In this paper, the single crystalline Si obtained by the Czochralski method using metallurgical grade silicon raw materials was characterised by minority carrier lifetime, optical microscopy, the concentration of impurities and the conversion efficiency. The influence of crystalline defects and impurity elements on the electrical property has been investigated. We can conclude that both defects and impurity elements play important roles in the deterioration of the minority carrier lifetime. The conversion efficiency of solar cell using the middle wafer can reach 11.39%. ? W. S. Maney & Son Ltd.
发表时间：2012-11-01