论文类型：会议论文
收录刊物：Scopus、EI
卷号：148-149
页面范围：947-950
摘要：Multi-crystalline silicon ingot was prepared by directional solidification method using metallurgical grade silicon as raw materials. The influence of impurities and crystalline defects in mc-Si on the minority carrier lifetime and resistivity was investigated. The results indicate that both grain boundary and impurities play important roles in the deterioration of the minority carrier lifetime. ? (2012) Trans Tech Publications, Switzerland.