论文类型：期刊论文
发表刊物：MATERIALS SCIENCE-POLAND
收录刊物：EI、SCIE
卷号：35
期号：1
页面范围：14-17
ISSN号：2083-134X
关键字：electron beam injection; silicon; solar energy materials; boron; oxidation
摘要：The behavior of boron redistribution in silicon with and without oxide layer after electron beam injection (EBI) was investigated. Special defect shapes were generated on the surface of bare and oxidized silicon wafers. Secondary ion mass spectrometer was used to measure the boron profile. The results showed that after long EBI time, boron tended to be induced from both sides of the transition region between the oxide layer and silicon. For the sample without oxide layer after EBI, boron tended to diffuse towards the surface and its concentration obviously reduced inside the silicon. The results of the study show the potential use of the process in removing boron impurity in silicon.