论文类型：期刊论文
发表刊物：VACUUM
收录刊物：EI、SCIE
卷号：166
页面范围：191-195
ISSN号：0042-207X
关键字：Electron beam melting; arsenic; Evaporation; Removal; Morphology
摘要：Arsenic is one of the main impurity elements in silicon. Electron beam melting (EBM) is considered an effective method for the purification of silicon. The removal of arsenic from silicon is performed by electron beam solidification furnace in this paper. The results demonstrated that arsenic could be removed effectively by EBM process with the average removal efficiency up to 95.4% and show the morphology of silicon ingot is less essential to distribution of arsenic impurities in the silicon ingot. The evaporation behavior of arsenic atoms is more important in the process of arsenic removal by EBM. The relationship between the evaporation coefficient of arsenic impurities and temperature was deduced. It provides a reference for further research on removal arsenic in silicon by EBM.